FIELD: magnetron sputtering.
SUBSTANCE: invention relates to inverted closed type magnetron sputtering device. In vacuum chamber with working gas there are at least one anode, two sputtered hollow cathode with sputtering objects located inside on holder, magnetic system which creates a magnetic field above the cathode surface. Cathodes have the shape of concave hollow bowls facing each other and in working condition detachably connected by necks, thus forming closed non-transparent for sprayed material volume, in which movement of atoms along trajectories opposite from first and second cathodes is provided, having a range of angular direction of sprayed material flow relative to the object holder central plane from 2° up to 90°, axisymmetric.
EFFECT: technical result is to ensure the production of thin films of metals and compounds thereof in a vacuum at different objects, including on objects of complex geometric shape, at minimum irreversible losses of the sprayed material.
5 cl, 2 dwg
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Authors
Dates
2021-05-05—Published
2018-06-19—Filed