FIELD: semiconductors.
SUBSTANCE: embodiments of the present disclosure provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: base; bit lines disposed on the substrate, wherein the bit line material includes a metal-semiconductor chemical compound; semiconductor channels, each of which includes a first doped region, a channel region and a second doped region arranged in series, the first doped region being in contact with a bit line; the first dielectric layer covering the side wall surfaces of the first doped regions, between portions of the first dielectric layer covering the side walls of adjacent first doped regions on the same bit line, the first interval is provided.
EFFECT: creation of a semiconductor structure with improved electrical characteristics in the structure of a dynamic memory array.
10 cl, 35 dwg
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