METHOD FOR MANUFACTURING A THIN-FILM TRANSISTOR Russian patent published in 2021 - IPC H01L21/283 H01L21/335 B82Y40/00 

FIELD: semiconductor production.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices, in particular to the technology for the manufacture of thin-film transistors with a reduced value of leakage currents. The method for manufacturing a thin-film transistor involves the formation of amorphous silicon a-Si by deposition at a rate of 0.5 nm/s in an induction-plasma reactor from a mixture of PH₃-SiH₄, at a frequency of 13.55 MHz, a voltage of 250 V, a substrate temperature of 300°C, a gas pressure of 6.6 Pa, a mixture flow rate of 5 cm³/min and a concentration ratio of PH₃/SiH₄=10^-6-10^-3.

EFFECT: invention makes it possible to increase the percentage of yield of suitable devices and improve their reliability.

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