TWO-SPECTRAL MATRIX PHOTO DETECTOR MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L31/02 H01L31/216 

FIELD: optical instrument making.

SUBSTANCE: invention relates to the optical instrument making and relates to the multi-element two-spectral array photodetector manufacturing method. Photodetector includes a housing with the input window, photosensitive elements matrix array (PEMA) with the thin absorbing layer of homogeneous semiconductor material, by the indium microcontacts connected to the glued to the switching raster readout circuit, which provides a connection to the photodetector external power supply and the video signal control circuit. In addition, the photodetector contains sputtered multilayer interference filters. At that, on the PEMA matrix, by sputtering forming only the cut-off filters, which create two maximum spectral sensitivity areas, and the composite blocking filter, which ensures the fronts steepness near the short-wave boundaries and the long-wave sensitivity boundaries and the secondary maxima minimization outside the maximum sensitivity areas, are performed by the multilayer coating spraying on the input window.

EFFECT: technical result consists in the device threshold characteristics improvement, filters on the PEMA surface forming technological processes number and total duration reduction, increase in the serviceable PEMA yield percentage.

1 cl, 3 dwg