METHOD FOR MANUFACTURING A SEMICONDUCTOR APPARATUS Russian patent published in 2021 - IPC H01L21/76 

FIELD: semiconductors.

SUBSTANCE: invention relates to the field of technology for manufacturing semiconductor apparatuses, in particular, to a technology for manufacturing a sealing layer with a reduced leak current value. A method for manufacturing a semiconductor device apparatus is proposed, including the processes of forming the active areas of the apparatus, an insulating layer characterised by the fact that the insulating layer is formed by growing an oxide layer on an IpR p-type substrate with an alloying level of 8*10¹⁷ cm^-3 by means of reactive sputtering of an IpR n-type plate of 0.002 ohm*cm at a pressure of 3 to 10^-5 Pa and an inflow of oxygen O₂ at a pressure of 13 Pa, at a current density at the cathode of 0.5 mA/cm², a magnetic flux density of 0.015 T, a substrate temperature of 70°C by deposition at a rate of 2.5 nm/min, followed by annealing at a substrate temperature of 250°C in an atmosphere of nitrogen N₂ for 35 min.

EFFECT: reducing the leak current, ensuring manufacturability, improving the structural parameters, increasing the quality and raising the percentage of the product yield.

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