METHOD OF CONTACT-BARRIER METALLIZATION PRODUCTION Russian patent published in 2019 - IPC H01L21/283 

FIELD: instrument engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to manufacturing of contact-barrier metal coating of device. Technology of the method is as follows: a silicon substrate of p-type conductivity, orientation (100), specific resistance of 10 Ohm*cm with insulating layer of silicon oxide with thickness of 0.35 mcm is formed by successive deposition of Co film 25 nm thick by thermal evaporation in vacuum 2*10^-3 Pa with deposition rate of 1 nm/s with subsequent two-step annealing: in beginning at temperature 450 °C for 30 minutes in a hydrogen medium to form CoSi₂, then at temperature of 910 °C for 10 minutes in argon medium Ar. Above silicide CoSi₂ barrier layer of TiN with thickness of 35 nm in atmosphere (Ar+N₂) and Al (0.5 % Cu) film with thickness of 0.8 mcm. Further, heat treatment is carried out at temperature of 300 °C for 30 minutes in hydrogen medium.

EFFECT: method provides reduced values of leakage currents, improved parameters of devices, improved manufacturability and increased percentage yield.

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