METHOD FOR FORMATION OF SILICIDE Russian patent published in 2022 - IPC H01L21/283 

FIELD: semiconductor manufacturing.

SUBSTANCE: invention relates to the semiconductor device manufacturing technology. The method for formation of silicide includes electron-beam deposition of palladium with a thickness of 50 nm in vacuum on a silicon substrate and annealing, while according to the invention, the deposition is carried out by evaporation, which is carried out in vacuum at a pressure of 1·10^-5 Pa, followed by exposure to a beam of Ar ions with an energy of 200 keV at an angle of 7° with a dose of 3 · 10 ¹⁶ cm^-2 and the ion beam current density is 1.5 µA/cm² at a temperature of 50°C with a growth rate of 0.3 nm/s, and annealing is carried out at a temperature of 200°C in a vacuum of 1·10^-3Pa for 10 min.

EFFECT: present invention enables to reduce the contact resistance of the device, improve the manufacturability, improve the parameters of the devices, improve the quality and increase the percentage of the yield of suitable ones.

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