SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2025 - IPC H01L21/283 H01L21/3205 H01L21/768 

FIELD: production of semiconductor devices.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to production of titanium silicide with reduced contact resistance. Technology of the method consists in the following: on silicon wafers with orientation (100), with specific resistance of 10 Ohm*cm, an oxide layer with thickness of 0.3 mcm was grown, in which contact windows were etched. Then, layers of Ti and amorphous silicon a-Si are deposited by DC magnetron sputtering, with Ti and a-Si deposition rate of 14 and 9 nm/min, respectively, at pressure of residual gases 1*10^-5 Pa, pressure Ar during deposition – 0.3 Pa with subsequent two-stage fast annealing: 1st stage at temperature of 700 °C for 15 s, in an atmosphere of N_2, silicide is formed due to interaction of Ti with a layer of amorphous silicon a-Si, 2nd stage at temperature of 875 °C for 10 s, in an atmosphere of N_2, the high-resistance phase of the silicide is transformed into a low-resistance phase. Before loading into the vacuum chamber, the plates are refreshed in 1% HF solution for 1 min. Active areas of the field-effect transistor and electrodes to them were formed according to the standard technology.

EFFECT: invention provides reduced contact resistance, manufacturability, improved parameters of devices, higher quality.

1 cl, 1 tbl