METHOD OF MANUFACTURING SEMICONDUCTOR APPLIANCE Russian patent published in 2017 - IPC H01L21/20 H01L21/331 

FIELD: electricity.

SUBSTANCE: in method of manufacturing a semiconductor appliance, a base-collector heterojunction is formed by growing an n-layer of Si 400 nm thick at the temperature of 1000°C with the growth rate of 2.5 nm/s, with the concentration of arsenic As (3-5)*10¹⁶ cm^-3, followed by growing a p-layer of SiGe 50 nm thick with the growth rate of 0.5 nm/s at the temperature of 625°C, with the boron concentration B (2-4)*10¹⁶ cm^-3, the pressure 3*10^-7 Pa.

EFFECT: reducing the density of defects, improving the parameters and the reliability, increasing the percentage of yield of suitable appliances.

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