FIELD: technological processes.
SUBSTANCE: invention relates to the field of technological processes and can be used for laser annealing of wafers made of semiconductor, ceramic and glassy materials. The method for laser processing of non-metallic plates according to the invention includes preheating the plates to a temperature determined from the proposed equation, based on the condition of the thermal strength of the plates, and irradiating the surface of the plates with continuous laser radiation with an energy density sufficient to reach the annealing temperature on the surface.
EFFECT: invention ensures the elimination of the destruction of the plates by thermoelastic stresses in the process of laser annealing and an increase in the yield of suitable plates.
1 cl, 1 dwg
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