FIELD: technological processes.
SUBSTANCE: invention relates to the field of technological processes and can be used for laser annealing of wafers made of semiconductor, ceramic and glassy materials. The effect is achieved by the fact that in the method for laser processing of non-metallic plates, they are preliminary heated to a temperature determined from the condition of thermal strength of the plates and their surface is irradiated with continuous laser radiation with an energy density sufficient to reach the annealing temperature on the surface.
EFFECT: elimination of destruction of plates by thermoelastic stresses during processing and an increase in the yield of suitable ones.
1 cl, 1 dwg
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