METHOD FOR MANUFACTURING CONTACT WINDOWS WITH A REDUCED SIZE FOR SEMICONDUCTOR DEVICES Russian patent published in 2022 - IPC H01L21/20 H01L21/306 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics and can be used in the manufacture of semiconductor devices, as well as reducing the size of contact windows and bus bars of metal wiring, integrated circuits, multi-chip modules, including 3D structures. The method for manufacturing contact windows with a reduced size for semiconductor devices smaller than photolithography makes it possible to achieve is that after deposition of the first layer of the dielectric, photolithography is carried out and the first layer of the dielectric is etched, and then the second layer of the dielectric is deposited, then the third layer of metal or semiconductor is deposited; then the CMP of the third layer is carried out and the fourth layer is deposited, either metal or semiconductor, while if the third layer is a semiconductor, then the fourth layer is metal, and if the third layer is metal, then the fourth layer is a semiconductor, and then the structure is heat-treated to form a silicide where the semiconductor comes into contact with metal sections, then, using the fourth layer as a mask, the silicide is etched and oxidized under the silicide layer and a contact window is formed, the size of which is smaller than photolithography can afford.

EFFECT: new solution for the semiconductor industry.

1 cl, 11 dwg, 1 tbl