METHOD FOR OBTAINING EPITAXIAL CALCIUM SILICIDE FILM (VARIANTS) Russian patent published in 2022 - IPC H01L21/263 H01L21/285 H01L21/3105 

FIELD: semiconductor industry.

SUBSTANCE: invention relates to the technology of manufacturing semiconductor devices. In the method for obtaining an epitaxial calcium silicide film, CaF₂ is first deposited on a substrate with a silicon layer on its working surface, a CaF₂ layer is formed from 4 to 10 nm or from 20 to 40 nm. Then, at the same time, ionizing radiation particles are irradiated with energy that provides excitation, decomposition and formation of atomic Ca in relation to CaF₂, and high-temperature treatment is carried out. The treatment is carried out by maintaining the heated state of the substrate to the temperature and the passage of time, providing, in relation to the irradiated sections of the CaF₂ layer, a layer of calcium silicide CaSi₂ of a characteristic spatial group is obtained. In another variant of the method, CaF₂ is simultaneously deposited on the silicon layer, irradiated with ionizing radiation particles, and high-temperature treatment is carried out over time, providing for the irradiated deposition sites of CaF₂ to obtain a layer of calcium silicide CaSi₂ of a characteristic spatial group , the deposition of CaF₂ is carried out with respect to the amount of calcium difluoride, which is equivalent in terms of the formed thickness of the layer of CaF₂ from 4 to 10 nm or from 20 to 100 nm during the time providing for the irradiated deposition sites of CaF₂ to obtain a layer of calcium silicide.

EFFECT: obtaining a strictly specified, single, polytype of the formed CaSi₂ film with the realization of obtaining both 6R and 3R polytype characteristic of the spatial group .

8 cl, 5 dwg