FIELD: radiation-chemical processing.
SUBSTANCE: invention relates to the field of radiation-chemical processing of crystalline materials. The method for etching the surface of sapphire plates includes processing with an electron beam, first a layer of gold 100÷20 nm thick is applied to the sapphire surface, the resulting composite is annealed in air at a temperature of 600÷700°C for 120÷180 minutes to form a discrete structure of gold nanoparticles, and then the surface is irradiated with a continuous beam of electrons with an energy in the range of E≈40÷70 keV, for 2÷5 min.
EFFECT: invention makes it possible to form a submicron relief on the supersmooth surface of sapphire plates.
3 cl, 3 dwg
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