METHOD FOR PRODUCING CHIPS OF SOLAR PHOTOCELLS Russian patent published in 2011 - IPC H01L31/18 

FIELD: power industry.

SUBSTANCE: method consists in application of ohmic contacts to front and rear surfaces of multi-layered semi-conductor structure GalnP/Ga(ln)As/Ge, which has been grown on germanic base, separation of the structure into chips by means of chemical etching method, passivation of side surface of chips with layer of silicium nitride, removal of some part of front contact layer of the structure and application of antireflection coating to front surface of the structure. Prior to application of the base of ohmic contacts, front and rear surfaces of the structure are cleaned by using ion-beam etching method to the depth of 0.005-0.1 mcm. Sputtering of ohmic contact on front surface of structure is performed through mask of photoresist material in the form of mesh from strips 5-10 mcm wide which are located from each other at the distance of 50-100 mcm. Thickening of the base of ohmic contacts is performed by electrochemical deposition through mask of photoresist material of layers of silver and gold with total thickness of 5-7 mcm. Separating chemical etching of structure is performed on the side of front surface to the depth of 10-15 mcm through mask of photoresist material.

EFFECT: improving parametres of photoelements owing to increasing the thickness of ohmic contacts.

3 cl, 4 dwg