INFRARED LIGHT-EMITTING HETERODIODE Russian patent published in 2023 - IPC H01L33/10 H01L33/30 H01L33/60 

FIELD: electronic engineering.

SUBSTANCE: semiconductor devices used in the development and manufacture of light emitting diodes and various devices based on them. The infrared light-emitting heterodiode consists of a carrier substrate with a metal reflector, an additional reflector layer based on a wide-band Al_0.9Ga_0.1As layer, a Bragg reflector, a multilayer light-emitting AlGaAs/GaAs heterostructure, an upper electrode on the surface of the heterostructure, a light-extracting surface of the heterostructure, and a lower electrode on the back surface of carrier substrate. The infrared light-emitting heterodiode has reduced optical losses.

EFFECT: reduction of optical losses of radiation and, thus, increasing external quantum efficiency of the LED.

8 cl, 1 dwg