METHOD FOR DETECTING DEFECTS IN SCHOTTKY FIELD-EFFECT TRANSISTORS MADE ON SEMICONDUCTOR MATERIALS A B Russian patent published in 2023 - IPC G01R31/26 

FIELD: semiconductor technology.

SUBSTANCE: method includes placing the studied field-effect transistor at the focus of a digital microscope operating in the visible and near infrared ranges connected to a PC. The following DC mode is set on the field-effect transistor under study: drain-source voltage - nominal value; gate-source voltage - a value equal to or greater than the cut-off voltage in absolute value, providing the minimum residual drain current. The value of the residual current is recorded. Using a digital microscope, in accordance with the invention, on the active area of the field-effect transistor, using the effect of electroluminescence, due to the glow of the active areas of the gates, places with an increased current density due to the presence of a microdefect are identified and localized.

EFFECT: reduction in the time of detection of defects and an increase in the reliability of the search for a defective area, due to its visual illumination.

1 cl, 3 dwg