METHOD FOR FORMATION OF GERMANIUM NANOCLUSTERS IN A GeO[SiO] FILM USING ELECTRON BEAM ANNEALING Russian patent published in 2023 - IPC H01L21/263 B82Y40/00 

Abstract RU 2793595 C1

FIELD: obtaining nanosized silicon-based composite structures.

SUBSTANCE: invention can be used in opto- and nanoelectronics. The method of formation of germanium nanoclusters in a GeO[SiO] film using electron beam annealing includes preliminary preparation of a thin GeO[SiO] film on a fused quartz substrate, followed by electron beam annealing. According to the invention, a thin film is obtained by simultaneous evaporation of GeO2 and SiO powders using electron beams in high vacuum (10-6 Pa), while the evaporation rate of the target is selected so that the rate of deposition of both components on the quartz substrate is the same at a temperature of 100°C, then samples of the resulting film with a thickness of ~400 nm are covered with a protective layer of SiO2 with a thickness of 10 nm when placed perpendicular to the electron beam in a vacuum chamber with a pressure of 10-2 Pa, electron beam current density of 20 mA/cm2, with an accelerating voltage of 2000 V and subjected to electron beam annealing for 60 seconds.

EFFECT: provision of optimal modes of electron-beam annealing necessary for formation of germanium nanocrystals/nanoclusters in a GeO[SiO] film with controlled dimensions.

1 cl, 1 dwg

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Authors

Lunev Nikita Aleksandrovich

Baranov Evgenii Aleksandrovich

Zamchii Aleksandr Olegovich

Konstantinov Viktor Olegovich

Shchukin Viktor Gennadevich

Volodin Vladimir Alekseevich

Dates

2023-04-04Published

2022-12-02Filed