FIELD: semiconductors.
SUBSTANCE: invention is used as a read-write and memory conversion circuit. The read-write conversion circuit also comprises a read amplifier, a local data line, a local complementary data line, a global data line and a global additional data line, and the read-write conversion module comprises a local read-write unit and a global read-write unit, wherein the read data path of the read-write conversion circuit passes from the bit line and the complementary bit line to the local data line and the local complementary data line through the read amplifier, then to the local read-write unit through the local data line and the local complementary data line, then to the global data line and the global complementary data line via the local read/write unit, and finally to the global read/write unit via the global data line and the global complementary data line.
EFFECT: speed of the read-write operation of the read-write conversion circuit is variable, so that the performance of the memory is improved.
10 cl, 7 dwg
