METHOD FOR PRODUCING FILM BASED ON OXIDE OF INDIUM AND TIN Russian patent published in 2023 - IPC H01L33/46 

FIELD: semiconductor technology.

SUBSTANCE: method for producing a film based on indium and tin oxide, which includes high-temperature heating of a substrate placed in a working chamber under vacuum conditions, deposition of a film of indium and tin oxide on the heated substrate by magnetron sputtering of a target containing indium and tin oxide with using a working gas flow for bombarding the target, and subsequent high-temperature processing of the substrate with the deposited film. According to the invention, the substrate is heated to a temperature of 400°C to 550°C. Argon is used as a working gas during target sputtering, and high-temperature processing of the substrate with the deposited film is carried out by exposing it to a temperature of 540-550°C for 5-15 minutes in a working chamber filled with a gaseous medium containing a chemically neutral gas and oxygen, while the oxygen content in the gaseous medium is not more than 50 vol.%.

EFFECT: production of an ITO film with the combination of properties permitting extension of the scope of application of the film.

1 cl, 3 dwg