METHOD FOR MANUFACTURING DOPED REGIONS Russian patent published in 2018 - IPC H01L21/265 

FIELD: instrument engineering.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the technology for manufacturing doped regions with reduced defectiveness. In the method for manufacturing the doped regions in the virgin wafers of indium phosphide, silicon ions with an energy of 400 keV are introduced to form a doped n-region, dose 1*10¹⁴ cm^-2 at a temperature of 200 °C, followed by annealing at a temperature of 750 °C in the flow of hydrogen for 5–15 minutes.

EFFECT: reduction in defect density, ensuring processability, improving parameters, increasing reliability and increasing the percentage of yield of good devices.

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