SEMICONDUCTOR STRUCTURE AND METHOD OF ITS MANUFACTURE Russian patent published in 2023 - IPC H01L23/532 

FIELD: semiconductors.

SUBSTANCE: semiconductor structure and method for its manufacture. The semiconductor structure includes: a doped conductive layer doped with dopant ions; a metallic conductive layer located on top of the doped conductive layer; a nitrogen-containing dielectric layer located on top of the metal conductive layer; the first molybdenum nitride layer located between the doped conductive layer and the metal conductive layer and configured to be electrically connected to the doped conductive layer and the metal conductive layer; and the second molybdenum nitride layer located between the metal conductive layer and the nitrogen-containing dielectric layer, wherein the atomic ratio of nitrogen atoms in the second molybdenum nitride layer is greater than the atomic ratio of nitrogen atoms in the first molybdenum nitride layer.

EFFECT: improved the conductivity characteristics of the metal conductive layer.

10 cl, 4 dwg