FIELD: microelectronics.
SUBSTANCE: according to the invention, a semiconductor structure and a method for its manufacture are proposed. The semiconductor structure includes a base and a storage unit located on the base. The storage unit includes: a first dielectric layer and a metal bit line located in the first dielectric layer; a semiconductor channel located on a partial surface of the metal bit line; a line of words located around a partial region of the semiconductor channel; a second dielectric layer located between the metal bit line and the word line, and also located on the word line side away from the base; a first lower electrode layer and a second lower electrode layer stacked on an upper surface of the semiconductor channel remotely from the metal bit line, the first lower electrode layer being in contact with the upper surface of the semiconductor channel; an upper electrode layer located on the upper surface of the second lower electrode layer and surrounding the first lower electrode layer and the second lower electrode layer; and a capacitor dielectric layer located between the upper electrode layer and the first lower electrode layer, and also located between the upper electrode layer and the second lower electrode layer.
EFFECT: invention provides an increase in the degree of integration of the semiconductor structure due to a semiconductor device in which the capacitance is increased and the dimensional accuracy of the capacitor is increased.
17 cl, 22 dwg
