FIELD: semiconductor devices.
SUBSTANCE: method of manufacturing involves providing a substrate; forming on the substrate a plurality of first structures extending in a first direction; formation of a sacrificial layer on the side surface of each of the first structures; forming an outer separation layer on the side surface of each sacrificial layer; removing portions of each outer separation layer to obtain structured outer separation layers so as to expose portions of each sacrificial layer; and removal of sacrificial layers to form air gaps between structured outer separation layers and first structures.
EFFECT: invention discloses a method of making a semiconductor device and a semiconductor device.
15 cl, 15 dwg
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