METHOD FOR OBTAINING POROUS STRUCTURE ON SURFACE OF SINGLE-CRYSTALLINE GERMANIUM Russian patent published in 2024 - IPC C30B29/08 C30B33/12 H01L21/02 

Abstract RU 2813191 C1

FIELD: materials science.

SUBSTANCE: used in the manufacture of electrodes for rechargeable lithium batteries, semiconductor layers in devices and integrated circuits and photoconverters. First, a crystallographically oriented plate of single-crystal germanium is prepared by cutting, grinding and polishing. The plate is then thermally etched at a temperature of 600 °C under low vacuum conditions of 10-5 Pa for 20 hours at a temperature gradient of 2 °C/cm.

EFFECT: formed porous structure on the surface of single-crystalline germanium has a given geometry and is free from germanium oxide.

1 cl, 3 dwg

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RU 2 813 191 C1

Authors

Tretiakov Sergei Andreevich

Ivanova Aleksandra Ivanovna

Kaplunov Ivan Aleksandrovich

Dates

2024-02-07Published

2023-08-09Filed