METHOD FOR GENERATION OF REGULAR QUANTUM DOT ARRAYS Russian patent published in 2021 - IPC H01S5/00 B82B3/00 B82Y40/00 

FIELD: electronics.

SUBSTANCE: invention relates to the field of electronics and optoelectronics and can be used in creating structures of active elements of nano- and optoelectronics and integrated circuits based thereon. The method for generation of a regular quantum dot array includes using a substrate with nucleation centers, controlled formation of nucleation centers, selective formation of quantum dots, wherein the photolithography method is used to form the nucleation centers, depressions are used as nucleation centers, a buffer layer separating the substrate and quantum dots is formed.

EFFECT: invention allows forming regular quantum dot arrays with high structural perfection and controlling the position of nucleation centers by controlled creation of nucleation centers using the photolithography method in form of depressions and deposition of a buffer layer separating the substrate and quantum dots.

1 cl, 1 dwg