FAST ATOM SOURCE FOR DIELECTRIC ETCHING Russian patent published in 2024 - IPC H01J27/04 H01J37/32 C23C14/35 H05H3/00 

FIELD: various technological processes; physics.

SUBSTANCE: invention relates to treatment of articles with accelerated ions or fast atoms and is intended to produce articles with improved characteristics due to removal of a defective surface layer with a beam of fast atoms. Source of fast atoms for etching dielectrics comprises a gas-discharge chamber, a cylindrical hollow cathode inside the chamber, an anode inside the hollow cathode and a circular concave grid covering the outlet hole of the hollow cathode. Opposite the grid there is a screen passing through its focal point, with an opening in the area of the focal point.

EFFECT: improving reliability and service life of a beam of fast argon atoms during processing of dielectric articles due to reduction of dielectric contamination on the source electrodes.

1 cl, 1 dwg