SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/331 H01L21/205 

FIELD: electricity.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of bipolar transistor with high breakdown voltage. Technology of the method consists in the following: on the p-type conductivity silicon plates forming the concealed n⁺ layer according to the standard technology, then successively growing epitaxial layer of p-type conductivity with thickness of 3.5 mcm with concentration of dopant of boron 1.0 * 10¹⁵ cm^-3, which serves as continuation of substrate, then forming epitaxial layer of n^- type conductivity with thickness of 7.1 mcm with concentration of dopant phosphorus of 1.0 * 10¹⁵ cm^-3 and upper epitaxial layer of n ^- type conductivity with thickness of 4.4 mcm with concentration of dopant phosphorus 2.3 * 10¹⁵ cm^-3. Formation of silicon films on a silicon substrate was performed at a growth rate of 20 nm/min at temperature of 750 °C, pressure of 1.33 * 10^-5 Pa and a silane feed rate of 14.3^cm3/min. Active regions of the transistor and electrodes are formed by standard technology.

EFFECT: invention provides higher values of breakdown voltage of devices, improved parameters and quality of instruments, increased yield.

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