FIELD: electricity.
SUBSTANCE: resonator has circular section and is made in the form of a revolution solid. The revolution solid comprises an active area, facing layers and a part of a substrate. A generatrix of the side surface of the revolution solid is inclined relative to the normal line of a heterostructures.
EFFECT: possibility to output radiation, which is wideband by wave length, in vertical direction.
2 dwg
Title | Year | Author | Number |
---|---|---|---|
SEMICONDUCTOR INFRARED SOURCE (VERSIONS) | 2011 |
|
RU2465699C1 |
SEMICONDUCTOR FREQUENCY-TUNED INFRARED SOURCE | 2010 |
|
RU2431225C1 |
METHOD FOR OBTAINING LASER RADIATION WITH LOW DIVERGENCE AND DIODE LASER FOR ITS IMPLEMENTATION | 2016 |
|
RU2627192C1 |
HETEROSTRUCTURE OF A HIGH-POWER SEMICONDUCTOR LASER WITH A SPECTRAL RANGE OF 1,400-1,600 nm | 2016 |
|
RU2646951C1 |
DIODE MULTI-BEAM SOURCE OF COHERENT LASER RADIATION (VERSIONS) | 2009 |
|
RU2419934C2 |
SEMICONDUCTOR LASER | 1996 |
|
RU2109382C1 |
METHOD OF SELECTING OPTICAL MODES IN MICRORESONATORS USING NANOANTIBODIES | 2015 |
|
RU2721586C2 |
INJECTION LASER | 2018 |
|
RU2685434C1 |
INJECTION LASER | 2010 |
|
RU2443044C1 |
INJECTION LASER HAVING MULTIWAVE MODULATED EMISSION | 2013 |
|
RU2540233C1 |
Authors
Dates
2011-07-10—Published
2009-12-07—Filed