METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Russian patent published in 2022 - IPC H01L21/265 H01L21/268 B82B3/00 

FIELD: semiconductors production.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices. According to the invention, a method for the formation of semiconductor devices is proposed, which includes the formation of a thin gate oxide 13 nm thick on a silicon wafer by thermal oxidation at 1000°C for 40 min in dry O₂ with the addition of 3% HCl, annealing in argon for 15 min, deposition over a layer of silicon oxide over channel area of ​​a polysilicon layer 300 nm thick by pyrolytic decomposition of SiH₄ silane at a temperature of 670°C in argon, after which the polysilicon is doped with boron ions with a dose of 10¹³ cm^-2 with an energy of 90 keV and the resulting semiconductor structure is annealed under the action of a scanning argon laser with a power of 10-15 W.

EFFECT: invention provides reduction of leakage current values, manufacturability of the method, improvement of device parameters, improvement of quality and increase in the yield percentage of suitable devices.

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