HIGH-POWER MICROWAVE FIELD-EFFECT TRANSISTOR Russian patent published in 2025 - IPC H10D30/87 

FIELD: electricity.

SUBSTANCE: invention can be used for active elements of microwave devices. Powerful microwave field-effect transistor made on a semi-insulating substrate with an active layer of increased conductivity, in the form of a periodic set of cells, contains parallel electrodes of drain, gate, source, wherein similar source and drain electrodes from different cells are electrically connected, forming transistor signal summation circuits, wherein source is made in form of two separate parallel electrodes arranged on active layer and separated by semi-insulating gap, inside the semi-insulating gap there is an additional gate electrode connected by one end to the summation gate circuits; located along one line parallel to source and drain, subgates form cell gate electrode, subgates are separated from each other by semi-insulating areas and are connected by jumpers to an additional gate electrode, at the same time electrodes of source, additional gate electrode and drain are made elongated.

EFFECT: providing the possibility of improving the thermal mode of operation and increasing strength characteristics.

1 cl, 6 dwg, 2 tbl