METHOD OF OPTICAL CHECKING OF DEFECTS IN LOWER LAYERS OF SILICON STRUCTURES Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: planarizing dielectric layer is applied additionally onto checked lower layer and opened by removing top layers of structure. Coefficient of refractivity of dielectric layer is equal to 0,8-1,2 coefficient of refractivity of opened dielectric layer. Thickness d of the layer satisfies relation, where B is average depth of unevenness at surface of dielectric layer; A is aperture of objective; Δf is depth of focus of objective. EFFECT: simplified process of checking; any optical objectives may be used. 1 dwg, 1 tbl