RESONANCE-TUNED TRANSIT-TIME DIODE Russian patent published in 1995 - IPC

FIELD: electronic engineering. SUBSTANCE: at least one of potential barriers of quantum heterostructure, namely, barrier limiting potential well on transit-time section boundary, is built up of two layers of different semiconductor materials having different potential jump for main charge carriers on heteroboundary between layers of these materials and mentioned layer forming potential well; two layers abutting transit-time section have lower value of mentioned potential jump than that abutting potential well. EFFECT: improved efficiency and maximum working frequency of resonance-tuned tunnel transit-time diode due to reduced phase length of charge carrier packs. 3 dwg