FIELD: microelectronics. SUBSTANCE: in compliance with specified process plates of gallium arsenide are treated in concentrated hydrogen peroxide for the course of 5-10 min. Then structures are washed in deionized running water for 15 min. Oxygen-carrying impurities are removed by subsequent treatment in concentrated aqueous solution of ammonia for the course of 3-7 min. This process diminishes twofold content of carbon on surface of gallium arsenide. EFFECT: improved quality of gallium arsenide semiconductor structures thanks to diminished level of their contamination with carbon and keeping of geometrical dimensions of structures. 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR INTEROPERATION PRESERVATION OF GALLIUM ARSENIDE PLATES | 1988 |
|
SU1582921A1 |
| METHOD TO PRESERVE SURFACE OF SUBSTRATES FROM GALLIUM ARSENIDE | 2012 |
|
RU2494493C1 |
| GaAs SURFACE PASSIVATION METHOD | 2009 |
|
RU2402103C1 |
| METHOD FOR PRE-EPITAXY CLEANING OF GALLIUM ARSENIDE PLATES | 1988 |
|
SU1593513A1 |
| METHOD FOR CLEANING CALCIUM ARSENIDE SURFACE | 1988 |
|
SU1559980A1 |
| METHOD OF DETERMINATION OF THICKNESSES OF GaAs AND GaAlAs IN MULTILAYER STRUCTURES | 1987 |
|
SU1544111A1 |
| METHOD FOR CHALCOGEN TREATMENT OF n-TYPE GALLIUM ARSENIDE SURFACE | 2005 |
|
RU2291517C1 |
| METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURE BASED ON AB COMPOUNDS AND ITS FORMATION METHOD | 2010 |
|
RU2420828C1 |
| METHOD FOR PREPARING EVEN-ATOM SURFACE OF GALLIUM ARSENIDE | 2006 |
|
RU2319798C1 |
| CRYSTAL OF A HIGH-VOLTAGE HYPERSPEED HIGH-CURRENT DIODE WITH A SCHOTTKY BARRIER AND P-N JUNCTIONS | 2022 |
|
RU2803409C1 |
