GASEOUS-DISCHARGE PLASMA SOURCE OF DUOPLASMATRON TYPE Russian patent published in 1995 - IPC

FIELD: electrical engineering. SUBSTANCE: gaseous-discharge plasma source has discharge chamber 1 formed in gap between hollow anode 2 and intermediate electrode 3 which have axial channels 4,5 between their spaces and chamber, cathode 7 installed in space of electrode, tube 10 to feed plasma-forming gas coupled to space of anode, branch pipe 11 to supply protective gas, magnet 12 and vacuum pumping system 13. Source is provided with vacuum line 14, control valve 15 and vacuum pump 16 coupled in series to space of electrode. Branch pipe 11 is joined to chamber 1. Dimensions of channel 5 of electrode, valve conductance and speed of response of pump are chosen proceeding from condition: P>Q, L>D>1.5r where P, Q are pressures correspondingly in chamber and in space of electrode; L, D are accordingly length and diameter of channel of electrode, r is mean free path of atom of impurity in protective gas at pressure Q. Surfaces of channel and butt of electrode are made from refractory metal with big atomic mass, mainly from tantalum. Light gas, predominantly hydrogen, is chosen in the capacity of protective gas. For reduction of content of condensing and/or chemically active impurities control valve 15 can be connected to vacuum trap 17 and/or to filter-aborber 18 which is coupled to vacuum pumping system 13. EFFECT: expanded application field. 6 cl, 1 dwg