RESISTIVE CONTACT MANUFACTURING PROCESS Russian patent published in 1996 - IPC

Abstract SU 1823709 A1

FIELD: microelectronics; manufacture of high-speed integrating circuits. SUBSTANCE: process involves deposition of metal film on semiconductor preceded by plasma cleaning of semiconductor surface at plasma glow discharge of 0.08-0.12 mA/sq.cm for 2-6 min and followed by film irradiation with glow-discharge plasma at DC supply in inert gas environment under same conditions. EFFECT: simplified procedure, reduced contact resistance. 3 dwg, 1 tbl

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SU 1 823 709 A1

Authors

Astakhova N.A.

Strel'Tsov M.V.

Bondar' V.B.

Dates

1996-09-27—Published

1987-07-17—Filed