METHOD FOR MANUFACTURE OF THIN-FILMED RESISTORS Russian patent published in 1996 - IPC

FIELD: microelectronics; may be used in technology for manufacture of stable thin-filmed resistors of hybrid integral circuits and microassemblies. SUBSTANCE: method includes deposition in vacuum onto dielectric substrate successively layer of resistive alloy based on chromium, nickel and silicon, and conducting layer; formation of pattern of conductor and resistive members; deposition in vacuum of silicon layer at temperature of 275-325 C for 20-25 min; heat treatment of thin-filmed resistors in open air at temperature of 375-525 C for 20-25 min. As a result, protective layer of silicon dioxide is formed on the surface of resistive member, and a part of silicon diffuses into layer located near surface of resistive film. Stability of nominal values of thin-filmed resistors in this way increases by a factor of 100. EFFECT: higher accuracy and time stability of nominal values of thin-filmed resistors. 1 tbl