FIELD: microelectronics. SUBSTANCE: electron resist is illuminated in sequence and under program control by electron beam in form of square-shaped dies. Sizes of dies are determined by maximal density of beam cross-section at focusing plane. After that latent image is developed. Current density and width of the die are chosen from the relation given in the description of the invention. EFFECT: improved efficiency of process; optimized thermal conditions of illumination. 4 dwg, 4 tbl
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Authors
Dates
1995-05-20—Published
1991-05-23—Filed