METHOD OF FORMATION OF MICROIMAGES Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: layer of electron-sensitive resist on substrate is exposed to electron bean of arbitrary section performed by series of electron punches for the course of several cycles. Accumulation of optimum irradiation phase is carried out by small portions under high density of ray current and by provision of time sufficient for cooling of electron-sensitive resist between portions. Time necessary for cooling of electron-sensitive resist is used for irradiation of other elements of topological pattern. Increase of density of ray current leads to decrease of time spent for irradiation despite increase of total number of punches. Apart from division of irradiation dose into portions reduced time of irradiation may be achieved thanks to optimum selection of area of ray section in plane of focusing. Description of invention gives expressions for calculation of optimum area of punch and of number of cycles proceeding from parameters of electron-sensitive resist and of cathode-ray tube installation. EFFECT: decreased irradiation time. 2 cl, 2 dwg, 5 tbl