FIELD: manufacture of silicon devices and integrated circuits including silicon epitaxial growth in hydrogen environment.
SUBSTANCE: proposed method includes organization of n-conductivity regions in silicon, surface doping with acceptor impurity, oxidation, opening of windows in oxide, and epitaxial growth in hydrogen environment. In the process surface between n-conductivity regions is doped with acceptor impurity to concentration level lower by 3-8 times than that causing channel leaks under oxide upon epitaxial growth in hydrogen environment. Upon epitaxial growth structure is annealed in environment of inert gas, primarily nitrogen, at temperature higher by 100 °C and lower by 50 °C than epitaxial growth temperature for 3 - 30 minutes.
EFFECT: improved power characteristics of structures.
1 cl, 2 dwg
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