METHOD FOR PRODUCING INSULATING FILMS FOR MIS STRUCTURES BUILT AROUND SEMICONDUCTOR JUNCTIONS AB Russian patent published in 2006 - IPC H01L21/316 

FIELD: microelectronics.

SUBSTANCE: proposed method that can be widely used for manufacturing semiconductor devices, including MIS devices, built around type A₃B₅ semiconductors involves anodic oxidation of semiconductor wafer immersed in electrolyte. In the process semiconductor wafer is sequentially immersed in two electrolytes of which first one is characterized in that degree of charge introduced in film is lower than preset value by 0.5 - 10 V and that of second electrolyte is higher than preset value by 0.5 - 10 V. First electrolyte used for InSb based MIS structures has following composition, mass percent: persulfate ammonia, 1-3; glycerin, 30-70; dimethyl formamide, the rest. Anodic oxidation is conducted in quasi-volt static mode; second electrolyte has following composition: mass percent: pyrophosphoric acid, 0.3-3.0; carbon tetrachloride, 5-15; acetonitrile, the rest.

EFFECT: ability of producing insulating films with built-in charge of desired magnitude and sign.

2 cl