FIELD: microelectronics. SUBSTANCE: method involves measuring all initial characteristics mentioned in device specification for all devices in series to be selected. In addition voltage at device inputs and outputs are measured when currents run in range of 1-100 nA. Representative series of devices is subjected to penetrating radiation until number of fault and operating devices in series are of same order of magnitude. Arrays of initial parameters of fault and operating devices. Discrimination function D is calculated for each device from series by means of statistic image recognition methods. Radiation-proof devices conform to condition of D greater than Λ, where L is recognition threshold, which is determined by severity of selection conditions. EFFECT: elimination of radiation exposure of devices to be selected, increased validity of selection. 1 dwg
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Authors
Dates
1996-09-20—Published
1992-11-27—Filed