METHOD FOR DIVIDING INTEGRATION MICROCHIPS ON BASIS OF RADIATION RESISTANCE AND RELIABILITY Russian patent published in 2007 - IPC G01R31/303 

FIELD: technology for testing objects of electronic engineering, in particular may be used for quality control of samples of integration microchips with abnormally low radiation resistance and reliability.

SUBSTANCE: claimed method for dividing integration microchips on basis of radiation resistance and reliability includes irradiation of microchips with a small dose of ionizing radiation with number of stages equal to at least two and with measurement of, besides standard parameters, minimal power voltage at which functioning of microchips is preserved, prediction of breakdown dose on basis of change of parameters from irradiation dose, annealing of irradiated microchips and determining of reliability on basis of deviation of one or more parameters from original values before irradiation. After annealing stage, breakdown dose is determined additionally on basis of results of measurement of original values of parameters and final values of parameters after irradiation and low temperature annealing of integration microchips, after that abnormal microchips are detected by estimating results of measurements of final parameter values.

EFFECT: increased precision when determining radiation resistance of integration microchips in case of non-full restoration of parameters during low temperature thermal processing after irradiation with low dose of ionizing radiation and ensured culling of abnormal products.

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