FIELD: electricity.
SUBSTANCE: invention relates to electronic engineering and is intended for sorting of semiconductor devices and integrated circuits by radiation resistance. Essence: a set of informative parameters is determined for test semiconductor structures and/or electronic products, and values of these parameters are measured. Semiconductor structures and / or electronic products are irradiated with gamma-rays and values of informative parameters are measured after irradiation with gamma-rays. Isothermal annealing is performed to measure values of informative parameters after isothermal annealing. According to the measurement data, the radiation-thermal (RT) characteristic in the form of the RT vector in the coordinate system is plotted for each informative parameter, where abscissa is absolute deviation of informative parameter after irradiation, and ordinate is absolute deviation of informative parameter after heat treatment. Homogeneous values of radiation resistance of the article are selected on the basis of estimation of quality and stability of technological process as per distribution of RT of characteristics of informative parameters. Informative parameters and characteristics of semiconductor material used for making electronic equipment and test semiconductor structures are determined. Interconnection of information parameters and characteristics of semiconductor material with RT characteristics of test semiconductor structures and electronic products is determined. Permissible ranges of values of information parameters and characteristics of semiconductor material are established to achieve required levels of values of spread of RT characteristics of test semiconductor structures and required levels of resistance to radiation effects of electronic products. Semiconductor material is sampled by falling within the permissible range of values of informative parameters. Informative parameters and characteristics of the technological process and the technological operations included in it are used, which are used to make test semiconductor structures and electronic products. Electro-technical equipment uniform in radiation resistance parameters is selected by applying statistical control methods of informative parameters of technological process and achieving statistical homogeneity of values of information parameters and process characteristics, statistical homogeneity of RT characteristics of test semiconductor structures and levels of resistance to radiation effects of electronic products.
EFFECT: technical result is high level of uniformity of parameters of radiation resistance of electro-technical equipment in a group of articles.
1 cl, 3 dwg
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Authors
Dates
2019-12-11—Published
2018-08-20—Filed