FIELD: electricity.
SUBSTANCE: there performed is formation in a semiconductor substrate on an epitaxial depleted layer of the first type of conductivity, formation of a protective photoresistive layer, formation of pockets of the first type of conductivity, formation of a lock area, formation of a stopper, formation of a lock area in the already formed stopper, formation of a gate area by diffusion process of the reagent of the first type of conductivity, formation of windows of the second type of conductivity, formation of a source area, application of the third layer of photoresist material, formation of ohmic contacts to the source area, specific sputtering of several layers of metals onto the reverse side of the plate, as well as other operations of the method, which allow manufacturing a BSIT-transistor with guard rings.
EFFECT: manufacture of BSIT-transistors with increased values of breakdown voltage.
1 dwg
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