PROCESS OF PLASMA-CHEMICAL ETCHING OF POLYSILICON TO SILICON Russian patent published in 1998 - IPC

FIELD: manufacture of integrated circuits of high integration degree on bipolar transistors in agreement with self-integration technology with use of polysilicon on silicon. SUBSTANCE: process of selective plasma-chemical etching of polysilicon to silicon envisages coating of plate with dielectric layer till layer of polysilicon is deposited, removal of dielectric layer from plate surface in points of subsequent formation of working crystals of integrated circuit, deposition of polysilicon layer, coating of plate with photoresist layer, opening of windows in photoresist layer in points of subsequent etching of polysilicon layer and removal of photoresist from peripheral areas of plate outside arrangement of working crystals of integrated circuits and from intercrystalline tracks, plasma-chemical etching of polysilicon layer to dielectric with check of termination of etching and of polysilicon to silicon without any noticeable breaks of silicon plate. Thus etching of polysilicon is conducted simultaneously to dielectric on periphery of plate and to silicon in working areas with possibility of check of finish of process of etching to dielectric. EFFECT: improved efficiency and productivity of process. 1 cl, 6 dwg