METHOD OF PREPARING REGULAR SILICON FILAMENTARY CRYSTALS Russian patent published in 1998 - IPC

Abstract RU 2117081 C1

FIELD: semiconductor technics. SUBSTANCE: layer of metal at least 400 thick is sprayed onto the surface of silicon plate, which is then subjected to masking by photoresistor followed by applying initiating admixture by way of electrochemical deposition of metal islands from electrolyte solution. EFFECT: essentially reduced parameter spread and enabled interchangeability of sensors with filamentary crystals.

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RU 2 117 081 C1

Authors

Shchetinin A.A.

Nebol'Sin V.A.

Dunaev A.I.

Popova E.E.

Boldyrev P.Ju.

Dates

1998-08-10—Published

1996-05-30—Filed