METHOD OF MAKING SEMICONDUCTOR STRUCTURE Russian patent published in 2016 - IPC H01L21/205 

FIELD: instrument making.

SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of semiconductor structures with low density of defects. In method of making semiconductor structure, growing of epitaxial layer Si_1-xGe_x is performed at a rate of 10 nm/min, at pressure 0.133 Pa, temperature of 750 °C, SiH₄ consumption of 10 cm³/min and ratio of concentrations of mixture GeH₄:SiH₄ = 3-6 %.

EFFECT: technical result is reduction of density of defects, providing processibility, improving parameters, high reliability and percentage yield.

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