LIGHT-EMITTING DIODE HETEROSTRUCTURE Russian patent published in 2010 - IPC H01L33/00 

FIELD: chemistry.

SUBSTANCE: according to the invention, the light-emitting diode heterostructure based on solid solutions of nitrides of group three metals Al_xIn_yGa_1(x+y)N (0≤x≤1, 0≤y≤1) with a p-n junction has an n-contact layer made from nitride material GaN, an active region with quantum wells formed by layers made from nitride material In_yGa_1-yN, a depletion layer made from nitride material Al_xGa_1-xN, a p-contact layer made from nitride material GaN. The depletion layer has varying composition with respect to aluminium on its thickness. In the direction of epitaxial growth of the heterostructure after the n-contact layer there is depletion layer. After the depletion layer there is an active region, and after the active region there is a p-contact layer. The depletion layer has on its thickness a first zone in which aluminium content increases from zero to a maximum value corresponding to aluminium content of the depletion layer material, a second zone in which aluminium content remains constant, and a third zone in which aluminium content falls from maximum to zero.

EFFECT: invention minimises mechanical stress on the border of the depletion layer with respect to the light-emitting diode heterostructure, in which the depletion layer lies after the n-contact layer and in front of the active region.

1 cl, 2 dwg