METHOD FOR RAISING GAIN OF SILICON-BASED SEMICONDUCTOR DEVICES Russian patent published in 2001 - IPC

Abstract RU 2168236 C2

FIELD: manufacture of semiconductor devices. SUBSTANCE: in the course of manufacture semiconductor devices are subjected to treatment with magnetic fields in pyramid space for at least 5 followed by stabilizing firing at 150-200 C for 10-30 minutes. EFFECT: facilitated manufacture, enlarged functional capabilities, enhanced reliability and percentage of yield. 1 tbl

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RU 2 168 236 C2

Authors

Mustafaev G.A.

Teshev R.Sh.

Mustafaev A.G.

Dates

2001-05-27—Published

1999-06-01—Filed